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DCB substrate materials

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Aluminum oxide, silicon nitride, or aluminum nitride — the selected substrate directly affects power module performance.

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Designed for thermal performance and durability

Designers can choose from a range of ceramic materials and copper thicknesses. Selecting the right DCB substrate requires balancing thermal conductivity, mechanical robustness, cost and application requirements.

  • Aluminum oxide (Al2O3): a cost-efficient combination of thermal performance and reliability

  • Silicon nitride (Si3N4): robust enough for challenging use cases that prioritize reliability

  • Aluminum nitride (AlN): superior thermal conductivity for maximum heat dissipation in demanding power systems

What the right substrate does

Reduces costs

Enhances durability

Optimizes performance

Aluminum oxide (Al2O3)

Al₂O₃ combines cost efficiency with stable mechanical properties and sufficient thermal conductivity. Readily available and proven, it remains the standard substrate for conventional power module use cases.

Features:

  • Cost-effective material

  • Good thermal conductivity

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Silicon nitride (Si3N4)

Si₃N₄ is thermally conductive, mechanically robust and highly durable. It conducts heat efficiently and remains stable under mechanical and thermal stress. This makes it well suited for high-reliability power modules.

Features:

  • Highest physical robustness

  • High thermal conductivity

  • Lowest thermal expansion coefficient

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Aluminum nitride (AlN)

AlN efficiently conducts heat in high-power applications. Although more costly than Al₂O₃, it delivers strong thermal performance and reliable operation for demanding tasks.

Features:

  • Highest thermal conductivity

  • Low thermal expansion coefficient

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Comparing key DCB substrate properties

Al2O3 (Alumina)

Si3N4 (Silicon Nitride)

AlN (Aluminum Nitride)

Thermal conductivity (W/m*K)

24 - 25

~85 - 90

≥ 170 (up to ~230 in premium grades)

Bending strength (MPa)

~400 - 500

~700 - 800

~350 - 450

Fracture toughness (MPa·√m)

~3

≥ 6.5

~3

DCB CTE (10⁻⁶/K) 1

~8.3 ... 9.2

~4.9 ... 6.4

~6.6 ... 7.9

Thermal‑cycling reliability

good

very good

good to very good 2

1 CTE of full DCB stack-up depends on thickness of ceramic, top and bottom copper
With AMB technology

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