The task of balancing energy supply and demand is becoming increasingly complex as renewables gain traction. Vincotech is easing the transition with power modules that make battery energy storage systems more efficient, reliable, and scalable.
Energy providers need storage capacity to satisfy surging demand for clean energy. As grids integrate more solar and wind power, energy storage systems (ESS) help balance their intermittency while improving resilience and responsiveness to varying demand. Efficient BESS solutions minimize energy loss and enhance overall system performance.
Vincotech power modules combine advanced topologies with silicon and silicon carbide technologies help optimize BESS designs. Housed in low parasitic inductance packages and equipped with advanced die attach technology, they maximize energy storage systems’ performance and reliability.
The flowNPC E3BP module delivers higher output power for system designs up to 250 kW. Its optimized baseplate ensures excellent thermal contact.
Optimized highly efficient chip combination with 1200 V IGBT H7 and SiC diode
Optimized pinout with low inductive commutation loops design (~3-6nH)
Convex baseplate with specialized surface treatment
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Optimized for energy storage systems up to 250+ kW, flowANPC E3BP features hybrid Si/SiC technology for higher efficiency.
Optimized highly efficient chip combination with 1200 V IGBT H7 and SiC MOSFET
Optimized pinout with low inductive commutation loops design (~3-6nH)
Convex baseplate with specialized surface treatment
The flowNPC E3BP module delivers higher output power for system designs up to 250 kW. Its optimized baseplate ensures excellent thermal contact.
Optimized highly efficient chip combination with 1200 V IGBT H7 and SiC diode
Optimized pinout with low inductive commutation loops design (~3-6nH)
Convex baseplate with specialized surface treatment
Optimized for energy storage systems up to 250+ kW, flowANPC E3BP features hybrid Si/SiC technology for higher efficiency.
Optimized highly efficient chip combination with 1200 V IGBT H7 and SiC MOSFET
Optimized pinout with low inductive commutation loops design (~3-6nH)
Convex baseplate with specialized surface treatment
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