flowCSPFC S3 SiC
B0-SP12CFA016ME-PD98G68T
Topology Housing Voltage R(DS)on Main chip technology Product status
PFC (Three-phase applications) flow S3 1200 V 16 mOhm SiC MOSFET Engineering Sample


Product description
Basic information
- Product line: flowCSPFC S3 SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 45
Electrical characteristics
- Voltage: 1200 V
- Current: 80 A
- R(DS)on: 16 mOhm
- Current Synthesizing PFC + Booster
- Integrated DC Link capacitors
- Kelvin Emitter for improved switching performance
- Temperature sensor
- Thin Al2O3 for easy thermal design
PFC (Three-phase applications)
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: no towers
- Footprint: 81.8 mm x 61.3 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow S3