flowANPC E3 SiC
B0-EP12NAA004MS-PS38F78T
Topology Housing Voltage R(DS)on Main chip technology Product status
Three-level ANPC flow E3 1200 V 4.25 mOhm SiC MOSFET Engineering Sample
Product description
Basic information
- Product line: flowANPC E3 SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 40
Electrical characteristics
- Voltage: 1200 V
- Current: 300 A
- R(DS)on: 4.25 mOhm
- Advanced Neutral Point Clamped topology
- IGBT
- Kelvin Emitter for improved switching performance
- MOSFET
- Temperature sensor
Three-level ANPC
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 109.9 mm x 62 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow E3