flowDUAL E3 SiC
B0-EP122PA002ME-PG88F18T
Topology Housing Voltage R(DS)on Main chip technology Product status


Product description
Basic information
- Product line: flowDUAL E3 SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 40
Electrical characteristics
- Voltage: 1200 V
- Current: 600 A
- R(DS)on: 2 mOhm
- Kelvin Emitter for improved switching performance
- Temperature sensor
Half-Bridge
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 109.9 mm x 62 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow E3