Skip to Content

flowBOOST E3BP dual

30-EX14B2A007WS01-PS29F28Z

Topology Housing Voltage R(DS)on Main chip technology Product status
Three-level FC Booster flow E3BP 1400 V 6.67 mOhm SiC MOSFET Engineering Sample
Placeholder image
Placeholder image

Product description

Basic information

  • Product line: flowBOOST E3BP dual
  • Product status: Engineering Sample
  • Standard packaging quantity (pieces): 24

Electrical characteristics

  • Voltage: 1400 V
  • Current: 225 A
  • R(DS)on: 6.67 mOhm

    Three-level FC Booster

  • Kelvin Emitter for improved switching performance
  • Temperature sensor
  • Gate Resistor
  • MOSFET
  • Dual Flying Cap Booster
  • Auxiliary diodes for FC pre-charge (patent pending)

Chip & isolation characteristics

    SiC MOSFET

  • Easy paralleling
  • Fast switching speed
  • Low on-resistance

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow E3BP

  • Mechanical connection to PCB: 4 towers
  • Footprint: 109.6 mm x 59.7 mm
  • Height: 15 mm
  • Pin type: Solder pin

Thermal documents

Handling instruction phase-change material
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
3D module outline
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
30-EX14B2A007WS01-PS29F28Z30-EX14B2A007WS01-PS29F28Z
contact