flowANPC E3BP
30-EQ12NAA003MS04-PT18F76T
Topology Housing Voltage R(DS)on Main chip technology Product status
Three-level ANPC flow E3BP 1200 V 2.83 mOhm SiC MOSFET Engineering Sample
Product description
Basic information
- Product line: flowANPC E3BP
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 24
Electrical characteristics
- Voltage: 1200 V
- Current: 250 A
- R(DS)on: 2.83 mOhm
- Kelvin Emitter for improved switching performance
- Temperature sensor
- Advanced Neutral Point Clamped topology
- Gate Resistor
Three-level ANPC
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 109.6 mm x 59.7 mm
- Height: 15 mm
- Pin type: Press-fit pin
flow E3BP