flowMNPC 1 SiC
10-PY12NMD016ME-PG08F18T
Topology Housing Voltage R(DS)on Main chip technology Product status


Product description
Basic information
- Product line: flowMNPC 1 SiC
- Product status: Series
- Standard packaging quantity (pieces): 100
Electrical characteristics
- Voltage: 1200 V
- Current: 100 A
- R(DS)on: 16 mOhm
- Integrated DC capacitor
- Kelvin Emitter for improved switching performance
- Low inductive commutation loop
- Mixed Voltage Neutral Point Clamped Topology (T-Type)
- SiC MOSFET
- Temperature sensor
Three-level MNPC (T-Type)
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 82 mm x 37.4 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow 1