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flowMNPC 1 SiC

10-FY12NMA009ME-PG09F18Z

Topology Housing Voltage R(DS)on Main chip technology Product status
Three-level MNPC (T-Type) flow 1 1200 V 8.67 mOhm SiC MOSFET Engineering Sample
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Product description

Basic information

  • Product line: flowMNPC 1 SiC
  • Product status: Engineering Sample
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 165 A
  • R(DS)on: 8.67 mOhm

    Three-level MNPC (T-Type)

  • Integrated DC capacitor
  • Kelvin Emitter for improved switching performance
  • Low inductive commutation loop
  • Mixed Voltage Neutral Point Clamped Topology (T-Type)
  • SiC MOSFET
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • Fast intrinsic diode with low reverse recovery
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow 1

  • Mechanical connection to PCB: 4 towers
  • Footprint: 82 mm x 37.4 mm
  • Height: 12 mm
  • Pin type: Solder pin

Thermal documents

Handling instruction phase-change material
Download (PDF)
Protection of TIM – ProCap
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-FY12NMA009ME-PG09F18Z10-FY12NMA009ME-PG09F18Z
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