flowMNPC 1 SiC
10-FY12NMA009ME-PG09F18Z
Topology Housing Voltage R(DS)on Main chip technology Product status


Product description
Basic information
- Product line: flowMNPC 1 SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 100
Electrical characteristics
- Voltage: 1200 V
- Current: 165 A
- R(DS)on: 8.67 mOhm
- Integrated DC capacitor
- Kelvin Emitter for improved switching performance
- Low inductive commutation loop
- Mixed Voltage Neutral Point Clamped Topology (T-Type)
- SiC MOSFET
- Temperature sensor
Three-level MNPC (T-Type)
Chip & isolation characteristics
- Fast intrinsic diode with low reverse recovery
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 82 mm x 37.4 mm
- Height: 12 mm
- Pin type: Solder pin
flow 1