flowBOOST E1 SiC

Basic information

• Product line: flowBOOST E1 SiC
• Product status: Engineering Sample
• Standard packaging quantity (pieces): 100

Electrical characteristics

• Voltage: 1200 V
• Current: 100 A
• R(DS)on: 32 mOhm

Booster

• Dual Booster
• Integrated DC capacitor
• Kelvin Emitter for improved switching performance
• Open Emitter configuration
• Temperature sensor

Chip & isolation characteristics

SiC MOSFET

• High Blocking Voltage with low drain source on state resistance
• High speed SiC-MOSFET technology
• Resistant to Latch-up

Isolation

• Base isolation: Al₂O₃

Mechanical & housing characteristics

flow E1

• Mechanical connection to PCB: 4 towers
• Footprint: 62.8 mm x 34.8 mm
• Height: 12 mm
• Pin type: Press-fit pin