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flowDUAL E2 SiC

10-EY232PB008ME01-PN97F08T

Topology Housing Voltage R(DS)on Main chip technology Product status
Half-Bridge flow E2 2300 V 8 mOhm SiC MOSFET Samples available
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Product description

Basic information

  • Product line: flowDUAL E2 SiC
  • Product status: Samples available
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 2300 V
  • Current: 200 A
  • R(DS)on: 8 mOhm

    Half-Bridge

  • Temperature sensor
  • Half Bridge

Chip & isolation characteristics

    SiC MOSFET

  • Fast intrinsic diode with low reverse recovery
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance

    Isolation

  • Base isolation: AlN

Mechanical & housing characteristics

    flow E2

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 57.7 mm
  • Height: 12 mm
  • Pin type: Press-fit pin

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)
Vincotech press-fit pins
Download (PDF)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-EY232PB008ME01-PN97F08T10-EY232PB008ME01-PN97F08T
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