flowDUAL E2 SiC
10-EY12SAA003MS-PT49F78T
Topology Housing Voltage R(DS)on Main chip technology Product status

Product description
Basic information
- Product line: flowDUAL E2 SiC
- Product status: Promotion
- Standard packaging quantity (pieces): 100
Electrical characteristics
- Voltage: 1200 V
- Current: 510 A
- R(DS)on: 2.8 mOhm
- Common emitter point Half Bridge
- SiC MOSFET
- Temperature sensor
Half-Bridge
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 62.8 mm x 57.7 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow E2