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flowMNPC E2 SiC

10-EY12NMA010MS-LS28F76T

Topology Housing Voltage R(DS)on Main chip technology Product status
Three-level MNPC (T-Type) flow E2 1200 V 10 mOhm SiC MOSFET Samples available
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Product description

Basic information

  • Product line: flowMNPC E2 SiC
  • Product status: Samples available
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 145 A
  • R(DS)on: 10 mOhm

    Three-level MNPC (T-Type)

  • Kelvin Emitter for improved switching performance
  • Temperature sensor
  • Mixed Voltage Neutral Point Clamped Topology (T-Type)

Chip & isolation characteristics

    SiC MOSFET

  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow E2

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 57.7 mm
  • Height: 12 mm
  • Pin type: Press-fit pin

Thermal documents

Handling instruction phase-change material
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)
Vincotech press-fit pins
Download (PDF)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-EY12NMA010MS-LS28F76T10-EY12NMA010MS-LS28F76T
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