flowNPFC E2 SiC
10-EY07LBB011ME-PQ84J18T
Topology Housing Voltage R(DS)on Main chip technology Product status
PFC (Three-phase applications) flow E2 650 V 11 mOhm SiC MOSFET Engineering Sample


Product description
Basic information
- Product line: flowNPFC E2 SiC
- Product status: Engineering Sample
- Standard packaging quantity (pieces): 100
Electrical characteristics
- Voltage: 650 V
- Current: 90 A
- R(DS)on: 11 mOhm
- Kelvin Emitter for improved switching performance
- Integrated DC capacitor
- Temperature sensor
- Low inductive commutation loop
- Neutral Boost PFC
- SiC MOSFET
- Integrated Resistor for improved dynamic behavior
PFC (Three-phase applications)
Chip & isolation characteristics
- High Blocking Voltage with low drain source on state resistance
- High speed SiC-MOSFET technology
- Resistant to Latch-up
SiC MOSFET
- Base isolation: Al2O3
Isolation
Mechanical & housing characteristics
- Mechanical connection to PCB: 4 towers
- Footprint: 62.8 mm x 57.7 mm
- Height: 12 mm
- Pin type: Press-fit pin
flow E2