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flowPIM E1

10-E112PMA060MS-L928A76Z

Topology Housing Voltage R(DS)on Main chip technology Product status
PIM (CIB) flow E1 1200 V 60 mOhm SiC MOSFET Engineering Sample
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Product description

Basic information

  • Product line: flowPIM E1
  • Product status: Engineering Sample
  • Standard packaging quantity (pieces): 100

Electrical characteristics

  • Voltage: 1200 V
  • Current: 26 A
  • R(DS)on: 60 mOhm

    PIM (CIB)

  • Converter+Brake+Inverter
  • Open Emitter configuration
  • SiC MOSFET
  • Temperature sensor

Chip & isolation characteristics

    SiC MOSFET

  • High Blocking Voltage with low drain source on state resistance
  • High speed SiC-MOSFET technology
  • Resistant to Latch-up

    Isolation

  • Base isolation: Al2O3

Mechanical & housing characteristics

    flow E1

  • Mechanical connection to PCB: 4 towers
  • Footprint: 62.8 mm x 34.8 mm
  • Height: 12 mm
  • Pin type: Solder pin

Thermal documents

Handling instruction phase-change material
Download (PDF)

Mechanical documents

Handling instruction
Download (PDF)
Housing dimensions
Download (PDF)
3D module outline
Download (STP)

Other documents

RoHS statement
Download (PDF)
REACH statement
Download (PDF)
UL certificate
Download (PDF)
Technical Explanation of Datasheet
Download (PDF)
Product Qualification at Vincotech
Download (PDF)
10-E112PMA060MS-L928A76Z10-E112PMA060MS-L928A76Z
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