Taking WBG to the next level
)
A new GaN-based power module provides an effective solution for highly efficient power conversion in isolated DC/DC converters or DC/AC inverter stages. It offers a 2-in-1 solution, and can be utilized either as a 10 mOhm H-Bridge or 5 mOhm half-bridge.
The module features E-mode GaN HEMTs chip technology, promoting high efficiency and power density, and is available in an industry-standard package with low stray loop inductance. It is compatible with external gate drives, offering engineers high design flexibility.
Main benefits
Highest design flexibility with external gate driver, enabling slew rate control for low EMC
Low voltage overshoots due to integrated snubber capacitors
High power density and small footprint for soft switching above 500 kHz
Kelvin source pin and low inductive gate loop for clean switching behavior
)