Our new flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a
silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz. This pairing not only delivers impressive performance, it also drives down the cost of external passive components. And the current rating of this new CIP (converter + inverter + power factor correction) topology in an integrated power module is no less impressive: 10 A @ 80° C heat sink temperature.
With this feature set, the deeply integrated flowIPM 1B CIP 600 V module offers everything manufacturers need to slash their overall system's size, cost, and time to market