fastPACK 0 SiC: fsw up to 400 kHz
900 V / 33 A
Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz.
Featuring a 900 V SiC MOSFET, it tops 1200 V SiC MOSFETs' switching performance and has a higher safety margin than 650 V MOSFETs. On top of that, the fastPACK 0 SiC module achieves greater efficiency than IGBTs (+8 % at a light load and +3 % at the full load).
And the fastPACK 0 SiC H-bridge is also the perfect solution when it comes to increasing power density for SMPS, charger and ESS applications ranging 2 - 4 kW.