1~ Solar
flowSOL 0 BI (T)
product family overview
generation features
1st - P896
- High efficiency, CoolMOS™ + SiC diode
- Ultra high switching frequency
- Use with flowSOL 0 RI (T) secondary
Related Information:
- High efficiency, CoolMOS™ + SiC diode
- Ultra high switching frequency
- Use with flowSOL 0 RI (T) secondary
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FZ06BIA083FI-P896E |  | 30 | 600 | 45 | MOSFET | flow 0 12 mm |
flowSOL 0 BI (TL)
product family overview
generation features
1st - P89xD
- With open emitter
- High efficiency
- Dedicated designs for transformer-based and transformer-less topologies
- Ultra high switching frequency
Related Information:
1st - P89xE
- High efficiency
- Dedicated designs for transformer-based and transformer-less topologies
- Ultra high switching frequency
- CoolMOS™ C6 + IGBT3
Related Information:
- High efficiency
- Dedicated designs for transformer-based and transformer-less topologies
- Ultra high switching frequency
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FZ06BIA099FS-P893E |  | 18 | 600 | 99 | Parallel | flow 0 12 mm | |
| 10-FZ06BIA070FS-P894E | | 25 | 600 | 70 | Parallel | flow 0 12 mm | |
| 10-FZ06BIA045FH-P897E | | 50 | 600 | 45 | Parallel | flow 0 12 mm | |
| 10-FZ06BIA045FH01-P897E10 | | 50 | 600 | 45 | Parallel | flow 0 12 mm | |
| 10-FZ06BIA041FS01-P898E10 | | 54 | 600 | 41 | Parallel | flow 0 12 mm |
flowSOL 0 RI (T)
product family overview
generation features
1st - P90x
- Ultra fast rectifier bridge
- Pseudo H-Bridge with CoolMOS™ and IGBT3
- Stealth™ II highside rectifier
- Use with flowSOL 0 BI (T) primary
Related Information:
- Ultra fast rectifier bridge
- Pseudo H-Bridge for usage of MOSFET and IGBT
- Use with flowSOL 0 BI (T) primary
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FZ06RIA045FH01-P906D10 | | 30 | 600 | 45 | Parallel | flow 0 12 mm | |
| 10-FZ06RIA045FH-P906D | | 50 | 600 | 45 | Parallel | flow 0 12 mm |
flowSOL 1 BI (T)
product family overview
generation features
1st - M523 T
- Dual input booster with bypass
- Resonant H-Bridge with high-speed IGBT
- Use with flowSOL 1 BI (T) secondary
Related Information:
1st - M527 T
- Dual input booster with bypass
- Resonant H-Bridge with MOSFET
- Use with flowSOL 1 BI (T) secondary
Related Information:
- Dual input booster with bypass
- Resonant H-Bridge with MOSFET or high-speed IGBT
- Use with flowSOL 1 BI (T) secondary
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FY06BIA080MF-M527E58 | | 20 | 650 | 80 | MOSFET | flow 1 12 mm |
flowSOL 1 RI (T)
product family overview
generation features
1st - M53x
- Ultra fast rectifier bridge
- Pseudo H-Bridge for usage of MOSFET and IGBT
- Shared output
- Use with flowSOL 1 BI (T) primary
Related Information:
- Ultra fast rectifier bridge
- Pseudo H-Bridge for usage of MOSFET and IGBT
- Use with flowSOL 0 BI (T) primary
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FY06RIA080MF-M537D58 | | 18 | 600 | 80 | Parallel | flow 1 12 mm |
flowSOL 1 BI (TL)
product family overview
generation features
1st - M523 TL
- Two independent inputs
- Full reactive power capability
- Temperature sensor
- High-speed IGBT
- High efficiency/cost ratio
Related Information:
1st - M528 TL
- Two independent inputs
- Full reactive power capability
- Temperature sensor
- MOSFET with ultra fast diode or SiC diode
- Highest efficiency
- Split output for deactivation of the intrinsic reverse diodes of the MOSFET > highest efficiency for reactive power
- No x-conduction problem (no negative gate bias required)
Related Information:
- High efficiency
- Dedicated designs for transformer-based and transformer-less topologies
- Ultra high switching frequency
| part number | docs | I (A) | U (V) | RDSon (mΩ) | technology | housing | comment |
|---|---|---|---|---|---|---|---|
| 10-FY07BIA041MC-M528E58 | | 33 | 650 | 40 | MOSFET | flow 1 12 mm | SiC diode |
| 10-FY07BIA041MF-M528E68 | | 33 | 650 | 40 | MOSFET | flow 1 12 mm |