NPC

2xflowNPC 4w

product family overview

generation features

1st - M80xF
  • 2400 V NPC-topology
  • Low commutation inductive
  • High power screw interface
  • Integrated DC-snubber capacitors
  • Asymmetrical commutation inductance technology

    Related Information:

  • 2400V NPC-topology
  • Low inductive
  • High power screw interface
  • Integrated DC-snubber capacitors
  • Assymetrical inductance technology
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
70-W424NIA800SH-M800F pdf 800 2400 IGBT 2xflowSCREW 4w
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3xflowNPC 4w

product family overview

generation features

1st - M400F
  • Ultra high efficient 3 phase mixed voltage NPC topology
  • Asymmetrical inductance for low turn off inductance with integrated snubber capacitors and utilized parasitic inductance for reduced turn on losses > no low inductive busbars required
  • Screw terminals

Related Information:

  • Ultra high efficient 3 phase mixed voltage NPC topology
  • Asymmetrical inductance for low turn off inductance with integrated snubber capacitors and utilized parasitic inductance for reduced turn on losses > no low inductive busbars required
  • Screw terminals
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
70-W624N3AA320SH-M400F pdfpdf 400 2400 1.85 IGBT4 HS 3xflowSCREW 4w
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flowNPC 0

generation features

1st - P92x IGBT
  • IGBT3
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

1st - P92x MOS
  • CoolMOSTM CP
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • Ultra high switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

2nd - P96x IGBT
  • IGBT Ufast + IGBT3
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • High switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

1st - P96x MOS
  • CoolMOSTM CP
  • Reactive Power
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • Ultra high switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

2nd - P96x MOS
  • CoolMOSTM C6
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • Ultra high switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

1st - P96x PAR
  • NPC topology with parallel switch
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • IGBT // MOSFET as parallel switch
  • Ready for reactive power
  • Dedicated designs for solar and UPS applications
  • High switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

2nd - P96x PAR
  • NPC topology with parallel switch
  • High efficiency three-level half-bridge (2 x 600V = 1200V)
  • IGBT // MOSFET as parallel switch
  • Ready for reactive power
  • Dedicated designs for solar and UPS applications
  • High switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins

Related Information:

  • High efficiency threelevel half-bridge (2 x 600V = 1200V)
  • Dedicated designs for solar and UPS applications
  • Ultra high switching frequency
  • Compatible with flowBOOST 0 symmetric
  • Low voltage ride through
  • Available with Press-fit pins
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
10-FZ06NRA069FP02-P967F68 pdf 69 600 Parallel flow 0 12 mm CoolMOS™ + IGBT, IGBT3, SiC diodes
10-FZ06NRA069FP03-P967F78 pdfpdf 69 600 Parallel flow 0 12 mm CoolMOS™ + IGBT, IGBT3, Stealth
10-FZ06NRA084FP02-P969F68 pdf 84 600 Parallel flow 0 12 mm CoolMOS™ + IGBT, IGBT3, SiC diodes
10-FZ06NRA084FP03-P969F78 pdfpdf 84 600 Parallel flow 0 12 mm CoolMOS™ + IGBT, IGBT3, Stealth
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flowNPC 1

product family overview

generation features

1st - M13xF
  • High efficient three-level half-bridge (2 x 600V = 1200V)
  • IGBT3 (600V) technology for low saturation losses
  • Low inductance layout
  • For solar, UPS and motor drives
  • Available with Press-fit pins

Related Information:

  • High efficient three-level half-bridge (2 x 600V = 1200V)
  • IGBT3 (600V) technology for low conduction losses
  • Low inductance layout
  • For solar, UPS and motor drives
  • Available with Press-fit pins
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
10-F106NIA100SA-M135F pdfpdf 100 600 IGBT3 flow 1 17 mm
10-F106NIA150SA-M136F pdfpdf 150 600 IGBT3 flow 1 17 mm
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flowNPC 1 MOS

product family overview

generation features

1st - M41x
  • Ultra high efficient
  • NPC with pure CoolMOS™ C6 MOSFET switches
  • SiC diodes
  • Split output eliminates x-conduction and enables reactive power
  • Ultra fast switching
  • Low inductance layout
  • Available with Press-fit pins

Related Information:

  • Ultra high efficient
  • NPC with pure MOSFET switches
  • SiC diodes
  • Split output eliminates x-conduction and enables reactive power
  • Ultra fast switching
  • Low inductance layout
  • Available with Press-fit pins
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
10-PY06NRA041FS-M413FY pdfpdf 29 600 41 MOSFET flow 1 12 mm
10-PY06NRA021FS-M410FY pdfpdf 58 600 21 MOSFET flow 1 12 mm
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flowNPC 2

product family overview

generation features

1st - M10xF
  • High efficient three-level half-bridge (2 x 600V = 1200V)
  • IGBT3 (600V) technology for low saturation losses
  • Low inductance layout
  • For solar, UPS and motor drives
  • High power flow2 housing
  • Compatible with flowBOOST 2 symmetric

Related Information:

  • High efficient three-level half-bridge (2 x 600V = 1200V)
  • IGBT3 (600V) technology for low conduction losses
  • Low inductance layout
  • For solar, UPS and motor drives
  • Compatible with flowBOOST 2 symmetric
part number docs I (A) U (V) RDSon (mΩ) Vce (V) technology housing comment
30-F206NIA200SA-M105F pdfpdf 200 600 IGBT3 flow 2 17 mm
30-F206NIA200SG-M105F25 pdfpdf 200 600 IGBT3 HS flow 2 17 mm Fast switching
30-F206NIA300SA-M106F pdfpdf 300 600 IGBT3 flow 2 17 mm
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